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| AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12m 45A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 45 32 120 44 0.3 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 110 Units /W /W Data and specifications subject to change without notice 1 200810135 AP60T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 25 12 4 7 10 9 58 18 6 200 135 1.4 Max. Units 12 25 3 1 250 100 20 16 2.1 V V/ m m V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA Gate Threshold Voltage Forward Transconductance 2 VDS=10V, ID=10A VDS=30V, VGS=0V o Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V VGS= 20V ID=20A VDS=20V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1135 1820 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP60T03GH/J 125 90 T C =25 C 100 o T C =175 o C 10V 8.0V ID , Drain Current (A) 60 10V 8.0V ID , Drain Current (A) 75 6.0V 6.0V 5.0V 50 5.0V 30 V G =4.0V 25 V G =4.0V 0 0 1 2 3 4 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D =15A T C =25 60 1.6 I D =20A V G =10V Normalized RDS(ON) RDS(ON) (m) 40 1.2 20 0.8 0 2 4 6 8 10 0.4 -50 25 100 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 100 2.3 10 T j =175 o C T j =25 o C VGS(th) (V) 1.8 IS(A) 1.3 1 0.8 0.1 0 0.5 1 1.5 0.3 -50 25 100 175 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP60T03GH/J 12 10000 f=1.0MHz I D =20A VGS , Gate to Source Voltage (V) 9 V DS =10V V DS =15V V DS =20V C (pF) 1000 6 C iss 3 C oss C rss 0 100 0 6 12 18 24 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 0.2 ID (A) 100us 0.1 0.1 0.05 PDM 0.02 0.01 10 1ms T C =25 C Single Pulse o t T 10ms 100ms DC 1 10 100 Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 1 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 60T03GH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 A A1 B1 E1 E B2 MIN NOM MAX 2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88 2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84 2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80 c c1 D A1 B2 B1 F D1 E E1 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 60T03GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6 |
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